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| Specification Comparison Vishay Siliconix TN0200K vs. TN0200T Description: N-Channel MOSFET Package: SOT-23 Pin Out: Identical Part Number Replacements: TN0200K-T1 Replaces TN0200T-T1 TN0200K-T1--E3 (Lead Free version) Replaces TN0200T-T1 Summary of Performance: The TN0200K is a technological upgrade with ESD protection for the original TN0200T. The ESD protection diodes on the gate increase Gate-Body Leakage; otherwise both parts perform identically including limits to the parametric tables below. ABSOLUTE MAXIMUM RATINGS (TA = 25 _C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation TA = 25_C TA = 70_C TA = 25_C See Note Symbol VDS VGS ID IDM PD Tj and Tstg RthJA TN0200K 20 "8 0.73 0.58 4 0.35 0.22 -55 to 150 357 TN0200T 20 "8 0.73 0.58 4 0.35 0.22 -55 to 150 357 Unit V A W _C _C/W Operating Junction and Storage Temperature Range Maximum Junction-to-Ambient SPECIFICATIONS (TJ = 25 _C UNLESS OTHERWISE NOTED) TN0200K Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State On State Drain Current Drain-Source On-Resistance Drain Source On Resistance Forward Transconductance Diode Forward Voltage VGS = 4.5 V VGS = 2.5 V VGS = 4.5 V VGS = 2.5 V V(BR)DSS VG(th) IGSS IDSS ID( ) D(on) rD ( ) Ds(on) gfs VSD 2.5 1.5 0.2 0.25 2.2 0.8 1.2 0.4 0.5 20 0.45 0.6 1.0 "5000 1 2.5 1.5 0.29 0.34 2.2 0.8 1.2 0.4 0.5 20 0.5 0.9 1.5 "100 1 V nA mA A W S V TN0200T Max Min Typ Max Unit Symbol Min Typ Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Qg Qgs Qgd 1400 190 300 2000 1900 50 750 2800 pC nC Switching Turn-On Time Turn-Off Turn Off Time NS denotes parameter not specified. td(on) tr td(off) tf 17 20 55 30 25 30 85 45 8 14 21 7 13 21 30 11 ns Document Number: 73004 19-May-04 www.vishay.com 1 |
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